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M52D16161A09 - 512K x 16Bit x 2Banks Mobile Synchronous DRAM

M52D16161A09_4747470.PDF Datasheet


 Full text search : 512K x 16Bit x 2Banks Mobile Synchronous DRAM


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PART Description Maker
M52D16161A09 M52D16161A-10TG M52D16161A-10BG M52D1 512K x 16Bit x 2Banks Mobile Synchronous DRAM
Elite Semiconductor Memory ...
Elite Semiconductor Memory Technology Inc.
M52S16161A09 M52S16161A-8TG M52S16161A-8BG M52S161 512K x 16Bit x 2Banks Mobile Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
M12S16161A07 M12S16161A-7BG M12S16161A-7TG 512K x 16Bit x 2Banks Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
M12L16161A-5TG M12L16161A-7BG M12L16161A-7TG M12L1 512K x 16Bit x 2Banks Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
M12S16161A-10T M12S16161A-10TG 512K x 16Bit x 2Banks Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
T431616D T431616E (T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
TMT
A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
AMIC Technology
M52D32321A-10BG M52D32321A-7.5BG 512K x 32Bit x 2Banks Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
M12L32321A-7BG M12L32321A-5.5BG M12L32321A-6BG 512K x 32Bit x 2Banks Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
K4M51163PC-X 8M x 16Bit x 4 Banks Mobile SDRAM
Samsung semiconductor
K4S511633F-YPC K4S511633F K4S511633F-F1H K4S511633 8M x 16Bit x 4 Banks Mobile SDRAM 8米16 × 4银行移动SDRAM
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
K4S161622D-TC_L10 K4S161622D-TC_L55 K4S161622D-TC_ 512K x 16Bit x 2 Banks Synchronous DRAM
Samsung semiconductor
 
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